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by IQAC KIITKIIT Deemed to be University — Internal Quality Assurance Cell

Publication2017

Temperature dependent analog/RF performance of double gate MOS transistor

The record

Type
Publication
Date
22 June 2017
Level
National
Journal
International Conference on Signal Processing Communication Power and Embedded System Scopes 2016 Proceedings
Pages
834-837
Published
22 June 2017
DOI
10.1109/scopes.2016.7955558
Scopus ID
85025131522
Authors
2
Open access
No
Citations
2
International co-authorship
No
Co-author countries
IN

Classification

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UN Sustainable Development Goals

  1. 9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending

    TargetPrimaryModerate confidenceJudged

    Investigation of temperature effects on double gate MOS transistor performance contributes to semiconductor device research and innovation.

    Moderate confidence
    The alignment is plausible and defensible but rests on an assumption a reasonable reviewer could decline. Published, and surfaced in the review queue for a human to confirm or override.
    Judged
    Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

Viksit Bharat @2047

  1. vb-3 Innovation, Science and Technology

    ThemePrimaryModerate confidenceJudged

    Derived through the seeded SDG-to-Viksit-Bharat crosswalk from the primary SDG 9 label. Investigation of temperature effects on double gate MOS transistor performance contributes to semiconductor device research and innovation.

    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

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KIIT Deemed to be University. “Temperature dependent analog/RF performance of double gate MOS transistor”. Kortex.

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