Publication2016
Performance analysis of junctionless double gate MOSFET using Silicon and In0.53Ga0.47As
- Industry, Innovation and Infrastructure
- Innovation, Science and Technology
The record
- Type
- Publication
- Date
- 22 November 2016
- Level
- National
- Journal
- International Conference on Communication and Signal Processing Iccsp 2016
- Pages
- 991-995
- Published
- 22 November 2016
- DOI
- 10.1109/iccsp.2016.7754296
- Scopus ID
- 85006827330
- Authors
- 2
- Open access
- No
- Citations
- 11
- International co-authorship
- No
- Co-author countries
- IN
Classification
Every label below carries the reasoning it was assigned on, the confidence band it was assigned in, and what produced it. The rubric is published.
UN Sustainable Development Goals
9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending
Semiconductor research on compound InGaAs junctionless double-gate MOSFETs improving on-current and subthreshold swing performance over silicon-based devices.
- High confidence
- The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3 Innovation, Science and Technology
Derived through the seeded SDG-to-Viksit-Bharat crosswalk from the primary SDG 9 label. Semiconductor research on compound InGaAs junctionless double-gate MOSFETs improving on-current and subthreshold swing performance over silicon-based devices.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Each label above carries the instrument and the version that produced it. How each classification is reached.
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- 1
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Citing this record
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KIIT Deemed to be University. “Performance analysis of junctionless double gate MOSFET using Silicon and In0.53Ga0.47As”. Kortex.