Publication2025
Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance
The record
- Type
- Publication
- Date
- 1 May 2025
- Level
- National
- Journal
- Journal of Electronic Materials
- Volume
- 54
- Issue
- 5
- Pages
- 3480-3493
- Published
- 1 May 2025
- DOI
- 10.1007/s11664-024-11548-1
- Scopus ID
- 105002948654
- ISSN
- 03615235
- Authors
- 7
- Open access
- No
- Citations
- 4
- International co-authorship
- No
- Co-author countries
- IN
Classification
Every label below carries the reasoning it was assigned on, the confidence band it was assigned in, and what produced it. The rubric is published.
UN Sustainable Development Goals
9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
Graded-channel gate-stack double-gate MOSFET optimization with varied gate metals improves switching speed and RF performance for advanced semiconductor devices.
- High confidence
- The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3.1 Research and development
High-performance semiconductor device engineering advances research and development for next-generation microelectronics applications.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
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- 1
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Citing this record
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KIIT Deemed to be University. “Optimized Gate Metal Variant Structure for Graded-Channel (GC) Gate-Stack (GS) Double-Gate (DG) MOSFET to Enhance Switching Speed, Analog and RF Performance”. Kortex.