Publication2017
Improvement of transconductance and gate source capacitance of Al0.27Ga0.73N/GaN HEMT at 45nm gate length with In0.1Ga0.9N back-barrier
The record
- Type
- Publication
- Date
- 18 October 2017
- Level
- National
- Journal
- Proceedings of 2nd International Conference on 2017 Devices for Integrated Circuit Devic 2017
- Pages
- 131-135
- Published
- 18 October 2017
- DOI
- 10.1109/devic.2017.8073921
- Scopus ID
- 85039930500
- Authors
- 3
- Open access
- No
- Citations
- 1
- International co-authorship
- No
- Co-author countries
- IN
Classification
Every label below carries the reasoning it was assigned on, the confidence band it was assigned in, and what produced it. The rubric is published.
UN Sustainable Development Goals
9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending
Simulation study of Al-GaN/GaN HEMT semiconductor device improves transconductance and capacitance characteristics at reduced gate length
- Moderate confidence
- The alignment is plausible and defensible but rests on an assumption a reasonable reviewer could decline. Published, and surfaced in the review queue for a human to confirm or override.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3.4 Intellectual property and deep tech
Advances deep technology through semiconductor device design innovation in high-electron-mobility transistor architectures
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Each label above carries the instrument and the version that produced it. How each classification is reached.
Evidence
Kortex hosts no documents. Evidence is an outbound link to the authority that holds it.
No outbound evidence link is recorded for this activity. The record below states which source it came from and when it was last read.
Provenance
Which source system this record came from, how many source rows were resolved into it, and when each was last read.
- Source rows resolved into this record
- 1
Each record carries the date Kortex last read it from its source system. That is a freshness date and not a verification: Kortex records what its sources say and when it read them, and it does not check those statements against any external authority. No claim on this site is described as verified, because none is.
Citing this record
This URL is stable. A record’s permalink is frozen when it is published and is not regenerated if its title is later corrected.
KIIT Deemed to be University. “Improvement of transconductance and gate source capacitance of Al0.27Ga0.73N/GaN HEMT at 45nm gate length with In0.1Ga0.9N back-barrier”. Kortex.