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by IQAC KIITKIIT Deemed to be University — Internal Quality Assurance Cell

Publication2019

Impact of the High-K dielectric material as spacer on analog and rf performance of the GS-DG-FinFET

The record

Type
Publication
Date
1 January 2019
Level
National
Journal
Journal of Nano and Electronic Physics
Volume
11
Issue
6
Published
1 January 2019
DOI
10.21272/jnep.11(6).06028
Scopus ID
85077111486
ISSN
20776772
Authors
3
Open access
No
Citations
2
International co-authorship
No
Co-author countries
IN

Classification

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UN Sustainable Development Goals

  1. 9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation

    GoalPrimaryHigh confidenceJudged

    High-permittivity dielectric spacer engineering for analog and RF performance enhancement in FinFET devices

    High confidence
    The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
    Judged
    Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

Viksit Bharat @2047

  1. vb-3.2 Digital technology and artificial intelligence

    Sub-themePrimaryHigh confidenceJudged

    Digital technology advancement through semiconductor device optimization and performance improvement

    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

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KIIT Deemed to be University. “Impact of the High-K dielectric material as spacer on analog and rf performance of the GS-DG-FinFET”. Kortex.

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