Publication2023
Effect of Dual Metal on RF/Analog and Linearity Performance of Double Gate Ferroelectric Si-doped-HfO2GaN MOSHEMT
The record
- Type
- Publication
- Date
- 1 January 2023
- Level
- National
- Journal
- Silicon
- Volume
- 15
- Issue
- 2
- Pages
- 805-812
- Published
- 1 January 2023
- DOI
- 10.1007/s12633-022-02045-3
- Scopus ID
- 85135851880
- ISSN
- 1876990X
- Authors
- 4
- Open access
- No
- Citations
- 5
- International co-authorship
- No
- Co-author countries
- IN
Classification
Every label below carries the reasoning it was assigned on, the confidence band it was assigned in, and what produced it. The rubric is published.
UN Sustainable Development Goals
9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending
Dual-metal ferroelectric GaN MOSHEMT device design advances RF/analog performance and linearity for high-frequency electronics.
- High confidence
- The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3.2 Digital technology and artificial intelligence
Semiconductor device innovation contributes to digital technology advancement.
- Moderate confidence
- The alignment is plausible and defensible but rests on an assumption a reasonable reviewer could decline. Published, and surfaced in the review queue for a human to confirm or override.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Each label above carries the instrument and the version that produced it. How each classification is reached.
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Provenance
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- Source rows resolved into this record
- 1
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Citing this record
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KIIT Deemed to be University. “Effect of Dual Metal on RF/Analog and Linearity Performance of Double Gate Ferroelectric Si-doped-HfO2GaN MOSHEMT”. Kortex.