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by IQAC KIITKIIT Deemed to be University — Internal Quality Assurance Cell

Publication2026

Designing a proposed negative capacitance (NC)-FinFET with enhanced parameters for versatile application

The record

Type
Publication
Date
1 January 2026
Level
International — held abroad
Journal
Journal of the Korean Physical Society
Volume
88
Issue
1
Pages
49-63
Published
1 January 2026
DOI
10.1007/s40042-025-01479-3
Scopus ID
105017850132
ISSN
03744884
Authors
5
Open access
No
Citations
2
International co-authorship
Yes
Co-author countries
IN, SA

Classification

Every label below carries the reasoning it was assigned on, the confidence band it was assigned in, and what produced it. The rubric is published.

UN Sustainable Development Goals

  1. 9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending

    TargetPrimaryHigh confidenceJudged

    Negative capacitance FinFET design with ferroelectric materials demonstrates enhanced subthreshold swing and sensitivity for biomolecule detection

    High confidence
    The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
    Judged
    Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

  2. 17.6 Enhance North-South, South-South and triangular cooperation on science, technology and innovation, and knowledge sharing

    TargetSecondaryHigh confidenceRule-derivedrule sdg17-structural-v1

    Structural signal: co-authorship outside India.

    Rule-derived
    Emitted by a deterministic rule from structural signals rather than judged from the record’s text. The rule carries a version, so rule-derived and judged labels stay separable.
    Produced by
    sdg17-structural-v1, under kortex-publication-v1

Viksit Bharat @2047

  1. vb-3.1 Research and development

    Sub-themePrimaryHigh confidenceJudged

    Semiconductor device research on negative capacitance transistors advancing next-generation electronics innovation

    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

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KIIT Deemed to be University. “Designing a proposed negative capacitance (NC)-FinFET with enhanced parameters for versatile application”. Kortex.

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