Publication2018
Design of cascode mixer based on bulk injection and switched biasing techniques in 180 nm CMOS process for a high performance receiver front end
The record
- Type
- Publication
- Date
- 1 March 2018
- Level
- National
- Journal
- Journal of Low Power Electronics
- Volume
- 14
- Issue
- 1
- Pages
- 49-56
- Published
- 1 March 2018
- DOI
- 10.1166/jolpe.2018.1527
- Scopus ID
- 85044854498
- ISSN
- 15461998
- Authors
- 3
- Open access
- No
- Citations
- 5
- International co-authorship
- No
- Co-author countries
- IN
Classification
Every label below carries the reasoning it was assigned on, the confidence band it was assigned in, and what produced it. The rubric is published.
UN Sustainable Development Goals
9 Build resilient infrastructure, promote inclusive and sustainable industrialization and foster innovation
Low-voltage cascode mixer using bulk injection and switched biasing achieves high conversion gain, low noise figure, and improved power efficiency for receiver design.
- High confidence
- The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3.4 Intellectual property and deep tech
RF/microwave circuit design innovation with improved performance metrics supports telecommunications technology development and intellectual property advancement.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Each label above carries the instrument and the version that produced it. How each classification is reached.
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- Source rows resolved into this record
- 1
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Citing this record
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KIIT Deemed to be University. “Design of cascode mixer based on bulk injection and switched biasing techniques in 180 nm CMOS process for a high performance receiver front end”. Kortex.