Publication2022
Compact drain current modeling of planar InGaAs quantum well MOSFET
- Industry, Innovation and Infrastructure
- Innovation, Science and Technology
The record
- Type
- Publication
- Date
- 1 September 2022
- Level
- National
- Journal
- Micro and Nanostructures
- Volume
- 169
- Published
- 1 September 2022
- DOI
- 10.1016/j.micrna.2022.207361
- Scopus ID
- 85136334695
- ISSN
- 27730123
- Authors
- 3
- Open access
- No
- Citations
- 1
- International co-authorship
- No
- Co-author countries
- IN
Classification
Every label below carries the reasoning it was assigned on, the confidence band it was assigned in, and what produced it. The rubric is published.
UN Sustainable Development Goals
9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending
Physics-based compact model for InGaAs quantum well MOSFET incorporates quantum confinement and band non-parabolicity effects from Schroedinger-Poisson solution.
- High confidence
- The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3 Innovation, Science and Technology
Derived through the seeded SDG-to-Viksit-Bharat crosswalk from the primary SDG 9 label. Physics-based compact model for InGaAs quantum well MOSFET incorporates quantum confinement and band non-parabolicity effects from Schroedinger-Poisson solution.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
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- 1
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Citing this record
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KIIT Deemed to be University. “Compact drain current modeling of planar InGaAs quantum well MOSFET”. Kortex.