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Publication2025

Bounded Flux-Based Modelling of the Memristor and Implementation of Hybrid CMOS-Memristor Read-Write Circuit

The record

Type
Publication
Date
1 January 2025
Level
National
Journal
3rd IEEE International Conference on Device Intelligence Computing and Communication Technologies Dicct 2025
Pages
213-217
Published
1 January 2025
DOI
10.1109/dicct64131.2025.10986648
Scopus ID
105006580171
Authors
6
Open access
No
Citations
0
International co-authorship
No
Co-author countries
IN

Classification

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UN Sustainable Development Goals

  1. 9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending

    TargetPrimaryHigh confidenceJudged

    Oxide-based memristor behavioral modeling with bounded flux properties advances research capacity in nanoscale device design and resistive switching technology

    High confidence
    The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
    Judged
    Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

Viksit Bharat @2047

  1. vb-3.1 Research and development

    Sub-themePrimaryHigh confidenceJudged

    Research and development in memristor technology and hybrid CMOS circuit design for next-generation computing applications

    Produced by
    claude-haiku-4-5-20251001, under kortex-publication-v1

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KIIT Deemed to be University. “Bounded Flux-Based Modelling of the Memristor and Implementation of Hybrid CMOS-Memristor Read-Write Circuit”. Kortex.

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Bounded Flux-Based Modelling of the Memristor and Implementation of Hybrid CMOS-Memristor Read-Write Circuit · Kortex