Publication2023
Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications
The record
- Type
- Publication
- Date
- 1 June 2023
- Level
- National
- Journal
- Journal of Computational Electronics
- Volume
- 22
- Issue
- 3
- Pages
- 827-838
- Published
- 1 June 2023
- DOI
- 10.1007/s10825-023-02024-w
- Scopus ID
- 85148999846
- ISSN
- 15698025
- Authors
- 5
- Open access
- No
- Citations
- 11
- International co-authorship
- No
- Co-author countries
- IN
Classification
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UN Sustainable Development Goals
9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending
Analytical modeling of ferroelectric AlGaN/GaN MOSHEMT with improved drain current and transconductance advances high-power RF and microwave device technology
- High confidence
- The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3.1 Research and development
Semiconductor device research supports research and development in advanced electronics
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
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- Source rows resolved into this record
- 1
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Citing this record
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KIIT Deemed to be University. “Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications”. Kortex.