Publication2021
A SPICE compatible physics-based intrinsic charge and capacitance model of InAs-OI-Si MOS transistor
The record
- Type
- Publication
- Date
- 1 August 2021
- Level
- National
- Journal
- Superlattices and Microstructures
- Volume
- 156
- Published
- 1 August 2021
- DOI
- 10.1016/j.spmi.2021.106975
- Scopus ID
- 85108866796
- ISSN
- 07496036
- Authors
- 2
- Open access
- No
- Citations
- 2
- International co-authorship
- No
- Co-author countries
- IN
Classification
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UN Sustainable Development Goals
9.5 Enhance scientific research, upgrade technological capabilities, and increase researchers and R&D spending
Develops SPICE-compatible physics-based model for InAs-on-Si MOS transistor intrinsic charge and capacitance characteristics with non-parabolic corrections.
- High confidence
- The subject matter is a strong and direct inference from the record type, the funding or organising body, or the programme context, even where the title alone is thin. Example: an ICMR-funded project against SDG 3, on the strength of the agency.
- Judged
- Judged against the published classification rubric, under the rubric and prompt versions recorded with the run that produced it.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
Viksit Bharat @2047
vb-3.4 Intellectual property and deep tech
Semiconductor technology advancement through physics-based transistor modeling enabling next-generation device design and performance optimization.
- Produced by
- claude-haiku-4-5-20251001, under kortex-publication-v1
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- 1
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Citing this record
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KIIT Deemed to be University. “A SPICE compatible physics-based intrinsic charge and capacitance model of InAs-OI-Si MOS transistor”. Kortex.